Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
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119 results for P.M. Mooney
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Confirmation of large lattice relaxation of the DX center by extended photo-ionization cross-section measurements
- G. Northrop
- P.M. Mooney
- 1991
- Journal of Electronic Materials
Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
- P.M. Mooney
- T.N. Theis
- et al.
- 1991
- Journal of Electronic Materials
Bistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
Exponential thermal emission transients from DX centers in heavily Si-doped GaAs
- E. Calleja
- P.M. Mooney
- et al.
- 1990
- Applied Physics Letters
Effect of indium on the properties of DX centers in Si-doped In y(Ga0.3Al0.7)1-yAs
- L.S. Pann
- M.A. Tischler
- et al.
- 1990
- Journal of Applied Physics
Effects of the local environment on the properties of DX centers in Si-doped GaAs and dilute AlxGa1-xAs alloys
- E. Calleja
- F. Garcia
- et al.
- 1990
- Applied Physics Letters
Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures
- U. Kaufmann
- W. Wilkening
- et al.
- 1990
- Physical Review B
Deep donor levels (DX centers) in III-V semiconductors
- P.M. Mooney
- 1990
- Journal of Applied Physics