DX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters
Publications
Date
Featured collections
Popular topics
119 results for P.M. Mooney
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- M.A. Tischler
- P.M. Mooney
- et al.
- 1992
- Journal of Applied Physics
Properties of DX centers in AlxGa1-xAs co-doped with boron and silicon
- P.M. Mooney
- M.A. Tischler
- et al.
- 1991
- Applied Physics Letters
Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Confirmation of large lattice relaxation of the DX center by extended photo-ionization cross-section measurements
- G. Northrop
- P.M. Mooney
- 1991
- Journal of Electronic Materials
Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
- P.M. Mooney
- T.N. Theis
- et al.
- 1991
- Journal of Electronic Materials
Bistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
Effect of indium on the properties of DX centers in Si-doped In y(Ga0.3Al0.7)1-yAs
- L.S. Pann
- M.A. Tischler
- et al.
- 1990
- Journal of Applied Physics
Effects of the local environment on the properties of DX centers in Si-doped GaAs and dilute AlxGa1-xAs alloys
- E. Calleja
- F. Garcia
- et al.
- 1990
- Applied Physics Letters