Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors
- J. Knoch
- J. Appenzeller
- 2002
- Applied Physics Letters
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91 results for Joerg Appenzeller
Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI
- J. Knoch
- B. Lengeler
- et al.
- 2002
- IEEE Transactions on Electron Devices
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
- S.J. Wind
- J. Appenzeller
- et al.
- 2002
- Applied Physics Letters
Controlling doping and carrier injection in carbon nanotube transistors
- V. Derycke
- R. Martel
- et al.
- 2002
- Applied Physics Letters
Investigation of the inter-tube coupling in single-wall nanotube ropes
- H. Stahl
- J. Appenzeller
- et al.
- 2001
- Materials Science and Engineering C
Phase-coherent transport in ropes of single-wall carbon nanotubes
- J. Appenzeller
- R. Martel
- et al.
- 2001
- Physical Review B - CMMP
Carbon Nanotube Inter- and Intramolecular Logic Gates
- V. Derycke
- R. Martel
- et al.
- 2001
- Nano Letters
Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes
- J. Appenzeller
- R. Martel
- et al.
- 2001
- Applied Physics Letters
A 10 nm MOSFET concept
- J. Appenzeller
- R. Martel
- et al.
- 2001
- Microelectronic Engineering
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
- J. Appenzeller
- R. Martel
- et al.
- 2000
- Applied Physics Letters