Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
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94 results for Fenton R. McFeely
Integration of direct plating of Cu onto a CVD Ru liner
- S. Malhotra
- D. Canaperi
- et al.
- 2004
- AMC 2004
Degradation of ultra-thin oxides with Tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Reliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
Liner materials for direct electrodeposition of Cu
- M.W. Lane
- C.E. Murray
- et al.
- 2003
- Applied Physics Letters
Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H 8Si 8O 12 clusters
- K.T. Nicholson
- K.Z. Zhang
- et al.
- 2002
- Journal of Applied Physics
Formation of mixed layers derived from functional silicon oxide clusters on gold
- Kenneth T. Nicholson
- Kangzhan Zhang
- et al.
- 2001
- Langmuir
Self-limiting chemical vapor deposition of an ultra-thin silicon oxide film using tri-(tert-butoxy)silanol
- K.A. Miller
- C. John
- et al.
- 2001
- Thin Solid Films