Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
- M.M. Banaszak Holl
- P.F. Seidler
- et al.
- 1993
- Applied Physics Letters
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94 results for Fenton R. McFeely
Impact ionization in silicon
- E. Cartier
- M.V. Fischetti
- et al.
- 1993
- Applied Physics Letters
Si/SiO2 interface: New structures and well-defined model systems
- Mark M. Banaszak Holl
- F. Read McFeely
- 1993
- Physical Review Letters
The chemisorption and reaction of GeCl4 with Si(100)
- D.A. Lapiano-Smith
- F.R. McFeely
- 1993
- Thin Solid Films
X-ray photoelectron spectroscopic studies of chemical vapor deposition with TaF5 precursor on polyimide surfaces
- D. Ugolini
- S.P. Kowalczyk
- et al.
- 1992
- Journal of Applied Physics
A mechanism for diborane induced selectivity loss in the chemical vapor deposition of silicon from SiH2Cl2
- D.A. Lapiano-Smith
- F.R. McFeely
- 1992
- Journal of Applied Physics
The chemisorption and reaction of BCl3 with Si(111)
- D.A. Lapiano-Smith
- F.R. McFeely
- 1992
- Journal of Applied Physics
Low temperature selective area chemical vapor deposition of gold films: Growth and characterization
- P.F. Seidler
- S.P. Kowalczyk
- et al.
- 1992
- MRS Proceedings 1992
Breakdown of the semiclassical description of hot-electron dynamics in SiO2
- E.A. Eklund
- F.R. McFeely
- et al.
- 1992
- Physical Review Letters
Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission
- E.A. Eklund
- P.D. Kirchner
- et al.
- 1992
- Physical Review Letters