Effect of sample doping level during etching of silicon by fluorine atoms
- J.A. Yarmoff
- F.R. McFeely
- 1988
- Physical Review B
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
94 results for Fenton R. McFeely
Interaction of hexafluoroazomethane with Si(111)
- F.R. McFeely
- J.A. Yarmoff
- et al.
- 1988
- The Journal of Chemical Physics
Summary Abstract: Theoretical investigations of fluorine-silicon systems
- Chris G. Van de Walle
- Y. Bar-Yam
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Dielectrics on semiconductors
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1988
- Materials Science and Engineering B
Oxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
Mechanism of ion-assisted etching of silicon by fluorine atoms
- J.A. Yarmoff
- F.R. McFeely
- 1987
- Surface Science
Electronic structure of the CaF2/Si(111) interface
- D. Rieger
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
C 1s excitation studies of diamond (111). II. Unoccupied surface states
- J.F. Morar
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
C 1s excitation studies of diamond (111). I. Surface core levels
- J.F. Morar
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
Structure and bonding at the CaF2/Si (111) interface
- F.J. Himpsel
- F.U. Hillebrecht
- et al.
- 1986
- Applied Physics Letters