Effect of sample doping level during etching of silicon by fluorine atoms
- J.A. Yarmoff
- F.R. McFeely
- 1988
- Physical Review B
Publications
Date
Featured collections
Popular topics
94 results for Fenton R. McFeely
Interaction of hexafluoroazomethane with Si(111)
- F.R. McFeely
- J.A. Yarmoff
- et al.
- 1988
- The Journal of Chemical Physics
Summary Abstract: Theoretical investigations of fluorine-silicon systems
- Chris G. Van de Walle
- Y. Bar-Yam
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Dielectrics on semiconductors
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1988
- Materials Science and Engineering B
Oxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
Mechanism of ion-assisted etching of silicon by fluorine atoms
- J.A. Yarmoff
- F.R. McFeely
- 1987
- Surface Science
Electronic structure of the CaF2/Si(111) interface
- D. Rieger
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
C 1s excitation studies of diamond (111). II. Unoccupied surface states
- J.F. Morar
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
C 1s excitation studies of diamond (111). I. Surface core levels
- J.F. Morar
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
Structure and bonding at the CaF2/Si (111) interface
- F.J. Himpsel
- F.U. Hillebrecht
- et al.
- 1986
- Applied Physics Letters