Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
Publications
Date
Featured collections
Popular topics
2 results for Yoshinori Tsuchiya
Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO2 gate stack systems
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2011
- Japanese Journal of Applied Physics