Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)

Abstract

We show a new Ge channel ion implantation scheme for realization of low-VTH pFET, which enables ∼500mV VTH lowering with no Tinv, GIDL and NBTI degradations. We also reveal the physical origin of the large VTH modulation. Based on experimental findings, we propose simplified photo-resist masked dual low-VTH CMOS flow and demonstrate low-VTH pFET/nFET operations. ©2010 IEEE.