Patterning ∼20 nm half-pitch lines on silicon using a self-assembled organosilicate etch mask
- Linnea Sundström
- Leslie Krupp
- et al.
- 2006
- Applied Physics Letters
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55 results for Y. Zhang
High performance FDSOI CMOS technology with metal gate and high-k
- Bruce Doris
- Y.-H. Kim
- et al.
- 2005
- VLSI Technology 2005
Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
The Micro to Nano Addressing Block (MNAB)
- K. Gopalakrishnan
- R.S. Shenoy
- et al.
- 2005
- IEDM 2005
Fabrication of metal gated FinFETs through complete gate silicidation with Ni
- Jakub Kedzierski
- Meikei Ieong
- et al.
- 2004
- IEEE Transactions on Electron Devices
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
- et al.
- 2004
- IEDM 2004
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
- Charles T. Black
- Kathryn W. Guarini
- et al.
- 2004
- IEEE Electron Device Letters
On the integration of CMOS with hybrid crystal orientations
- M. Yang
- V. Chan
- et al.
- 2004
- VLSI Technology 2004