Conference paper
Three dimensional CMOS devices and integrated circuits
Meikei Ieong, Kathryn W. Guarini, et al.
CICC 2003
We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology. © 2004 IEEE.
Meikei Ieong, Kathryn W. Guarini, et al.
CICC 2003
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ISTC 2008
Solomon Assefa, Fengnian Xia, et al.
OECC 2009
Solomon Assefa, Fengnian Xia, et al.
OFC 2009