A Simulation Study on Minimizing Threshold Voltage Variability by Optimizing Oxygen Vacancy Concentration under Metal Gate Granularity
- Madhu Padmanabha Sumangala
- Ahish Shylendra
- et al.
- 2020
- IEEE Electron Device Letters
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86 results for Takashi Ando
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
Origins of effective work function roll-off behavior for high-κ last replacement metal gate stacks
- Takashi Ando
- Eduard A. Cartier
- et al.
- 2013
- IEEE Electron Device Letters
On the electron and hole tunneling in a HfO2 gate stack with extreme interfacial-layer scaling
- Takashi Ando
- Ninad D. Sathaye
- et al.
- 2011
- IEEE Electron Device Letters
Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation
- Franco Stellari
- Ernest Y. Wu
- et al.
- 2022
- ESSDERC 2022
Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells
- Franco Stellari
- Leonidas E. Ocola
- et al.
- 2022
- IPFA 2022
Hardware Algorithm Co-optimization on Resistive RAM Cross-bar Array for Scalable Analog Compute Technology for AI application
- Y. Kim
- S.-C. Seo
- et al.
- 2021
- SNW 2021
Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications
- Steven Consiglio
- H. Higuchi
- et al.
- 2021
- IMCS 2021