Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
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88 results for Takashi Ando
BEOL compatible high-capacitance MIMCAP structure using a novel high k material
- P. Jamison
- John Massey
- et al.
- 2020
- IMCS 2020
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- John Rozen
- K. Suu
- et al.
- 2019
- IEDM 2019
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- Ernest Wu
- Takashi Ando
- et al.
- 2019
- IEDM 2019
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
- S. Kim
- John A. Ott
- et al.
- 2019
- IEDM 2019
Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
- A. Greene
- Huimei Zhou
- et al.
- 2019
- VLSI Technology 2019
Reliability Challenges with Materials for Analog Computing
- Eduard Cartier
- Wanki Kim
- et al.
- 2019
- IRPS 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018