Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- N. Gong
- Malte J. Rasch
- et al.
- 2022
- IEDM 2022
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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86 results for Takashi Ando
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- Ernest Wu
- Takashi Ando
- et al.
- 2019
- IEDM 2019
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- John Rozen
- K. Suu
- et al.
- 2019
- IEDM 2019
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
- S. Kim
- John A. Ott
- et al.
- 2019
- IEDM 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- IEDM 2017
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
- Takashi Ando
- Eduard Cartier
- et al.
- 2016
- IEDM 2016