Oxygen transport in high-κ/ metal gate stacks and physical characterization by SIMS using isotope labeled oxygen
- Marinus Hopstaken
- John Bruley
- et al.
- 2010
- ECS Transactions
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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86 results for Takashi Ando
Ultimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Materials and process integration issues in metal gate/high-k stacks and their dependence on device performance
- A.C. Callegari
- K. Babich
- et al.
- 2007
- ECS Meeting 2007
Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic
- Reinaldo A. Vega
- Takashi Ando
- et al.
- 2021
- IEEE J-EDS
Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and beyond
- Ramachandran Muralidhar
- Robert Dennard
- et al.
- 2018
- IEEE J-EDS
ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array
- Fabia Farlin Athena
- Nanbo Gong
- et al.
- 2023
- IEEE T-ED
Reversing A Decades-Long Scaling Law of Dielectric Breakdown using Hydrogen-Plasma-Treated HfO2 ReRAM Devices
- Ernest Y. Wu
- Takashi Ando
- et al.
- 2023
- Advanced Electronic Materials