Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
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88 results for Takashi Ando
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Voltage ramp stress based stress-and-sense test method for reliability characterization of Hf-base high-k/metal gate stacks for CMOS technologies
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- ECS Meeting 2011
On the electron and hole tunneling in a HfO2 gate stack with extreme interfacial-layer scaling
- Takashi Ando
- Ninad D. Sathaye
- et al.
- 2011
- IEEE Electron Device Letters
Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices
- Tackhwi Lee
- Kisik Choi
- et al.
- 2011
- Journal of Vacuum Science and Technology B
Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Changhwan Choi
- Takashi Ando
- et al.
- 2011
- Applied Physics Letters
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
Oxygen transport in high-κ/ metal gate stacks and physical characterization by SIMS using isotope labeled oxygen
- Marinus Hopstaken
- John Bruley
- et al.
- 2010
- ECS Transactions