Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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86 results for Takashi Ando

Mechanism of V_FB / V_TH shift in Dysprosium incorporated HfO₂ gate dielectric n-Type Metal-Oxide-Semiconductor devices
- - Tackhwi Lee
  - Kisik Choi
  - et al.
- 2011
- Journal of Vacuum Science and Technology B
Ruthenium based metals using atomic vapor deposition for gate electrode applications
- - Changhwan Choi
  - Takashi Ando
  - et al.
- 2011
- Applied Physics Letters
Physical origins of mobility degradation in extremely scaled SiO ₂ / HfO₂ gate stacks with la and Al induced dipoles
- - Takashi Ando
  - Matt Copel
  - et al.
- 2010
- Applied Physics Letters
Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- - Hiroaki Arimura
  - Richard Haight
  - et al.
- 2010
- Applied Physics Letters
Band-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO ₂ stack
- - Takashi Ando
  - Tomoyuki Hirano
  - et al.
- 2009
- IEEE Transactions on Electron Devices
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- - Changhwan Choi
  - Takashi Ando
  - et al.
- 2009
- Microelectronic Engineering