On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2
- F.A. Houle
- 1987
- Applied Physics Letters
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85 results for Frances A. Houle
Dynamics of SiF4 desorption during etching of silicon by XeF2
- F.A. Houle
- 1987
- The Journal of Chemical Physics
Optical self-regulation during laser-induced oxidation of copper
- L. Baufay
- F.A. Houle
- et al.
- 1987
- Journal of Applied Physics
Basic mechanisms in laser etching and deposition
- F.A. Houle
- 1986
- Applied Physics A Solids and Surfaces
A reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects
- F.A. Houle
- 1986
- Journal of Applied Physics
Summary Abstract: Heat and light in laser-materials interactions
- F.A. Houle
- 1986
- JVSTA
Surface processes leading to carbon contamination of photochemically deposited copper films
- F.A. Houle
- R.J. Wilson
- et al.
- 1986
- JVSTA
Laser chemical vapor deposition of copper
- F.A. Houle
- C.R. Jones
- et al.
- 1985
- Applied Physics Letters
Photochemical generation and deposition of copper from a gas phase precursor
- C.R. Jones
- F.A. Houle
- et al.
- 1985
- Applied Physics Letters
Photoeffects on the fluorination of silicon. II. Kinetics of the intial response to light
- F.A. Houle
- 1984
- The Journal of Chemical Physics