High performance of potassium n-doped carbon nanotube field-effect transistors
- M. Radosavljević
- J. Appenzeller
- et al.
- 2004
- Applied Physics Letters
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55 results for J. Knoch
Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors
- J. Knoch
- J. Appenzeller
- 2002
- Applied Physics Letters
Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI
- J. Knoch
- B. Lengeler
- et al.
- 2002
- IEEE Transactions on Electron Devices
A 10 nm MOSFET concept
- J. Appenzeller
- R. Martel
- et al.
- 2001
- Microelectronic Engineering
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
- J. Appenzeller
- R. Martel
- et al.
- 2000
- Applied Physics Letters