R.E. Walkup, Ph. Avouris, et al.
MRS Symposium 1983
We present output and transfer characteristics of single-gated, 36 nm, 46 nm and 56 nm channel length SOI MOSFETs with a V-groove design. For the shortest devices we find transconductances as high as 900 μS/μm and drive currents of 490 μA/μm at Vgs - Vth = 0.6 V. The V-groove approach combines the advantages of a controlled, extremely abrupt doping profile between the highly doped source/drain and the undoped channel region with an excellent suppression of short-channel effects. In addition, our V-groove design has the potential of synthesizing devices in the 10 nm range.
R.E. Walkup, Ph. Avouris, et al.
MRS Symposium 1983
Ph. Avouris, F. Bozso, et al.
Nuclear Inst. and Methods in Physics Research, B
J. Appenzeller, R. Martel, et al.
Applied Physics Letters
Ph. Avouris, J.E. Demuth
The Journal of Chemical Physics