Understanding of enhanced sensitivity to Hot Carrier degradation in drain engineered n-FETs
- C.C.-H. Hsu
- B.S. Wu
- et al.
- 1992
- SSDM 1992
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50 results for B. Davari
Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS
- Bijan Davari
- 1992
- ESSDERC 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS. Invited review paper
- Bijan Davari
- 1992
- Microelectronic Engineering
A High-Performance 0.25-μm CMOS Technology: I—Design and Characterization
- Wen-Hsing Chang
- Bijan Davari
- et al.
- 1992
- IEEE T-ED
BiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
Boron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistors
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- Applied Physics Letters
A novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991