Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers
- M. Berkenblit
- T.B. Light
- et al.
- 1970
- JES
Publications
Date
Featured collections
Popular topics
39 results for Arnold Reisman
A Method for the Synthesis of BI3 for Use as a Dopant Source
- M. Berkenblit
- A. Reisman
- 1970
- JES
Kinetics of the Reaction Hi-<111>Ge
- A. Reisman
- M. Berkenblit
- 1966
- JES
The Etching and Polishing Behavior of Ge and Si with HI
- A. Reisman
- M. Berkenblit
- 1965
- JES
Substrate Orientation Effects and Germanium Epitaxy in Open Tube HI Transport System
- A. Reisman
- M. Berkenblit
- 1965
- JES
Transpiration Studies of the Ge-I2-Inert Gas System
- A. Reisman
- M. Berkenblit
- et al.
- 1965
- JES
Thermodynamic Analyses of Open Tube Germanium Disproportionation Reactions
- A. Reisman
- S.A. Alyanakyan
- 1964
- JES
Room Temperature Chemical Polishing of Ge and GaAs
- Arnold Reisman
- Robert Rohr
- 1964
- JES
The Vapor Pressure of Iodine in the Temperature Interval 43°–80°C
- M. Berkenblit
- A. Reisman
- 1959
- JES