Permanent local modification of the magnetic bubble properties of epitaxial garnet films by laser annealing
- L. Schultz
- E.A. Giess
- et al.
- 2008
- Journal of Applied Physics
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71 results for T.O. Sedgwick
Stress-relieved regrowth of silicon on sapphire by laser annealing
- G.A. Sai-Halasz
- F. Fang
- et al.
- 2008
- Applied Physics Letters
Dominant surface electronic properties of SiO2-passivated Ge surfaces as a function of various annealing treatments
- T.O. Sedgwick
- 2003
- Journal of Applied Physics
Strain relaxation in silicon-germanium microstructures observed by resonant tunneling spectroscopy
- A. Zaslavsky
- K.R. Milkove
- et al.
- 1995
- Applied Physics Letters
SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition
- DA Grützmacher
- TO Sedgwick
- et al.
- 1995
- Vacuum
Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer
- J.K. Listebarger
- H.G. Robinson
- et al.
- 1995
- Journal of Applied Physics
Low Temperature Atmospheric Pressure Chemical Vapor Deposition for Epitaxial Growth of SiGe Bipolar Transistors
- D.A. Grutzmacher
- D.A. Grutzmacher
- 1995
- JES
Fabrication of three-terminal resonant tunneling devices in silicon-based material
- A. Zaslavsky
- K.R. Milkove
- et al.
- 1994
- Applied Physics Letters
Cyclotron effective mass of holes in Si1-xGex/Si quantum wells: Strain and nonparabolicity effects
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1994
- Applied Physics Letters
Cyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1994
- Surface Science