Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
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19 results for Mathieu Luisier
Physical modeling of HZO-based ferroelectric field-effect transistors with a WO x channel
- Xin Wen
- Mattia Halter
- et al.
- 2022
- Frontiers in Nanotechnology
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
- Mattia Halter
- Laura Begon-Lours
- et al.
- 2020
- ACS AMI
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
- L. De Michielis
- N. Daǧtekin
- et al.
- 2013
- Applied Physics Letters
Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
- Seung Hyun Park
- Yang Liu
- et al.
- 2012
- IEEE T-ED
On the interpretation of ballistic injection velocity in deeply scaled MOSFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Mathieu Luisier
- et al.
- 2012
- Nano Letters
Temperature dependence of the transconductance in ballistic III-V QWFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2011
- IEEE T-ED