PaperPerformance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)Seung Hyun Park, Yang Liu, et al.IEEE T-ED
PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
Conference paperAnalysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport modelsAndreas Schenk, Reto Rhyner, et al.SISPAD 2011