Electronic properties of two-dimensional systemsTsuneya AndoAlan B. Fowleret al.1982Reviews of Modern Physics
Calculated temperature dependence of mobility in silicon inversion layersFrank Stern1980Physical Review Letters
Effect of a thin transition layer at a Si-SiO2 interface on electron mobility and energy levelsFrank Stern1977Solid State Communications
Screening and level broadening in inversion layers with random fixed chargesFrank Stern1976Surface Science
Recent progress in electronic properties of quasi-two-dimensional systemsFrank Stern1976Surface Science
Many-body effects in the first excited subband of the n-inversion layer of SiB. VinterFrank Stern1976Surface Science
Calculated energy levels and optical absorption in n-type Si accumulation layers at low temperatureFrank Stern1974Physical Review Letters