Electroluminescence from Ge-doped GaP p - N junctions
- K.K. Shih
- G.D. Pettit
- et al.
- 2003
- Journal of Applied Physics
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29 results for M.R. Lorenz
Dependence of radiative efficiency in GaP diodes on heat treatment
- A.A. Onton
- M.R. Lorenz
- 2003
- Applied Physics Letters
Band structure and direct transition electroluminescence in the In 1-xGaxP alloys
- M.R. Lorenz
- W. Reuter
- et al.
- 2003
- Applied Physics Letters
Optical characterization of compound semiconductor alloys
- A.A. Onton
- M.R. Lorenz
- et al.
- 1974
- Journal of Crystal Growth
Dual coercive force hysteresis in MnAlGe films
- A.H. Eschenfelder
- A.A. Onton
- et al.
- 1974
- IEEE Transactions on Magnetics
Enhanced indirect optical absorption in AlAs and GaP
- W.P. Dumke
- M.R. Lorenz
- et al.
- 1972
- Physical Review B
Optical properties of the Ge donor and acceptor in GaP
- M.R. Lorenz
- G.D. Pettit
- et al.
- 1972
- Solid State Communications
Intra- and interband free-carrier absorption and the fundamental absorption edge in n-type InP
- W.P. Dumke
- M.R. Lorenz
- et al.
- 1970
- Physical Review B
The fundamental absorption edge of AlAs and AlP
- M.R. Lorenz
- R.J. Chicotka
- et al.
- 1970
- Solid State Communications
The gunn effect and conduction band structure in GaxIn1-xSb alloys
- J.C. McGroddy
- M.R. Lorenz
- et al.
- 1969
- Solid State Communications