Profiling of periodic structures (GaAsSingle Bond signGaAlAs) by nuclear backscattering
- J.W. Mayer
- J.F. Ziegler
- et al.
- 2003
- Journal of Applied Physics
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164 results for L.L. Chang
Molecular beam epitaxy of alternating metal-semiconductor films
- R. Ludeke
- L.L. Chang
- et al.
- 2003
- Applied Physics Letters
Interpretation of scanning high-energy electron diffraction measurements with application to GaAs surfaces
- D.B. Dove
- R. Ludeke
- et al.
- 2003
- Journal of Applied Physics
Ga1-x Alx As superlattices profiled by auger electron spectroscopy
- R. Ludeke
- L. Esaki
- et al.
- 2003
- Applied Physics Letters
Resonant tunneling in semiconductor double barriers
- L.L. Chang
- L. Esaki
- et al.
- 2003
- Applied Physics Letters
Stark shifts in gaas/gaalas quantum wells studied by photoluminescence spectroscopy
- L. Vina
- E. Mendez
- et al.
- 2000
- Journal of Physics C: Solid State Physics
Structural quality and the growth mode in epitaxial ZnSe/GaAs(100)
- S. Guha
- H. Munekata
- et al.
- 1993
- Journal of Applied Physics
Local structure about Mn atoms in In1-xMnxAs diluted magnetic semiconductors
- A. Krol
- Y.L. Soo
- et al.
- 1993
- Physical Review B
Role of the initial growth mode on the dislocation structure in MBE grown ZnSe/GaAs(100)
- S. Guha
- H. Munekata
- et al.
- 1993
- Journal of Crystal Growth
Local Mn structures in III-V diluted magnetic semiconductor (In,Mn)As
- H. Munekata
- L.L. Chang
- et al.
- 1993
- Journal of Crystal Growth