Effects of N2, O2, and H2O on GaAs passivated by photowashing or coating with Na2S⊙9H2O
- C.W. Wilmsen
- P.D. Kirchner
- et al.
- 1988
- Journal of Applied Physics
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177 results for J. Woodall
Structure and recombination in InGaAs/GaAs heterostructures
- E.A. Fitzgerald
- D. Ast
- et al.
- 1988
- Journal of Applied Physics
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
- K.L. Kavanagh
- M.A. Capano
- et al.
- 1988
- Journal of Applied Physics
Effect of iso-electronic dopants on the dislocation density of GaAs
- G.M. Blom
- J. Woodall
- 1988
- Journal of Electronic Materials
Characterization of mev ion-implanted gainas/gaas using x-ray and raman techniques
- Chu R. Wie
- K. Xie
- et al.
- 1989
- Proceedings of SPIE 1989
Structure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopy
- M.D. Pashley
- K.W. Haberern
- et al.
- 1988
- Physical Review Letters
Band bending and interface states for metals on GaAs
- R.E. Viturro
- J.L. Shaw
- et al.
- 1988
- Applied Physics Letters
Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C
- H. Shen
- S.H. Pan
- et al.
- 1988
- Applied Physics Letters
Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency
- H. Shen
- Z. Hang
- et al.
- 1988
- Applied Physics Letters
Highspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters