L.J. Brillson, M.L. Slade, et al.
Applied Physics Letters
We have used soft x-ray photoemission and optical emission spectroscopies to observe a broad range of Fermi level stabilization energies at metal interfaces with GaAs(100) surfaces grown by molecular beam epitaxy (MBE). The observed metal- and As-related interface cathodoluminescence plus orders-of-magnitude differences in bulk-defect-related photoluminescence between melt- versus MBE-grown GaAs suggest a role of bulk crystal growth and processing in controlling Schottky barrier formation.
L.J. Brillson, M.L. Slade, et al.
Applied Physics Letters
R.E. Viturrc, C. Mailhiot, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
L.J. Brillson, I.M. Vitomirov, et al.
Applied Surface Science
R.T. Collins, L. Vina, et al.
Proceedings of SPIE 1989