High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
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177 results for J. Woodall
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
- Z. Hang
- D. Yan
- et al.
- 1991
- Physical Review B
Comment on Electronic structure of ideal metal/GaAs contacts
- J. Freeouf
- J. Woodall
- et al.
- 1991
- Physical Review Letters
Optoelectronic applications of GaAs epilayers containing arsenic precipitates
- Alan C. Warren
- J. Woodall
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
- K. Mahalingam
- N. Otsuka
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
- J. Freeouf
- Alan C. Warren
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures