Vertical III-V nanowire device integration on Si(100)
- Mattias Borg
- Heinz Schmid
- et al.
- 2014
- Nano Letters
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117 results for Kirsten E. Moselund
Interface state density of single vertical nanowire MOS capacitors
- Philipp Mensch
- Kirsten E. Moselund
- et al.
- 2013
- IEEE TNANO
Tunneling and occupancy probabilities: How do they affect tunnel-FET behavior?
- Luca De Michielis
- Livio Lattanzio
- et al.
- 2013
- IEEE Electron Device Letters
InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs
- Heike Riel
- K. Moselund
- et al.
- 2012
- IEDM 2012
In situ doping of catalyst-free InAs nanowires
- Hesham Ghoneim
- Philipp Mensch
- et al.
- 2012
- Nanotechnology
InAs-Si nanowire heterojunction tunnel FETs
- Kirsten E. Moselund
- Heinz Schmid
- et al.
- 2012
- IEEE Electron Device Letters
C-V measurements of single vertical nanowire capacitors
- Philipp Mensch
- K. Moselund
- et al.
- 2011
- DRC 2011
Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors
- H. Schmid
- K. Moselund
- et al.
- 2011
- DRC 2011
Silicon nanowire tunnel FETs: Low-temperature operation and influence of high-k gate dielectric
- K. Moselund
- Mikael T. Björk
- et al.
- 2011
- IEEE T-ED
Corner effect and local volume inversion in SiNW FETs
- Luca De Michielis
- Kirsten Emilie Moselund
- et al.
- 2011
- IEEE TNANO