Very High-Power (425 Mw) Algaas Sqw-Grinsch Ridge Laser with Frequency-Doubled Output (41 Mw At 428 Nm)
- Heinz Jaeckel
- Gian-Luca Bona
- et al.
- 1991
- IEEE JQE
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104 results for Peter Vettiger
The electron beam proximity printing lithography, a candidate for the 0.35 and 0.25 micron chip generations
- U. Behringer
- W. Haug
- et al.
- 1991
- Microelectronic Engineering
Probe beam heating of AlGaAs single-quantum-well laser facets in Raman microprobe spectroscopy
- W.C. Tang
- H. Rosen
- et al.
- 1990
- Journal of Applied Physics
Conductance statistics of small-area ohmic contacts on GaAs
- N. Blanc
- P. Guéret
- et al.
- 1990
- Applied Physics Letters
Full wafer technology for semiconductor lasers
- P. Buchmann
- M. Benedict
- et al.
- 1990
- LEOS 1990
Full wafer processing and testing-the future of large scale laser fabrication
- P. Vettiger
- M. Benedict
- et al.
- 1990
- ISLC 1990
Dry ridge etching of AlGaAs GRINSCH lasers
- M. Jost
- P. Buchmann
- et al.
- 1990
- Microelectronic Engineering
Ridge Formation for AlGaAs GRINSCH Lasers by Cl2 Reactive Ion Etching
- M. Jost
- G.L. Bona
- et al.
- 1990
- IEEE Photonics Technology Letters
Broadband low-reflectivity coating for semiconductor power lasers by ion-beam and PECVD deposition
- E. Marclay
- D.J. Webb
- et al.
- 1989
- Applied Surface Science
Stepwise-graded-index multilayer broadband low-reflectivity coating for AlGaAs/GaAs power lasers
- E. Marclay
- D.J. Webb
- et al.
- 1989
- Applied Physics Letters