Ion-implantation-induced fluorine agglomeration in tungsten disilicide prepared by low-pressure chemical vapour deposition
- C.Sture Petersson
- Harry J. Whitlow
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B
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159 results for F.M. D'Heurle
Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering
- F.M. D'Heurle
- J.M.E. Harper
- 1989
- Thin Solid Films
Nucleation and growth in the reaction of titanium with germanium and some silicon-germanium alloys
- O. Thomas
- F.M. D'Heurle
- et al.
- 1989
- Applied Surface Science
Bilayers with chromium disilicide: Chromium-vanadium
- T.G. Finstad
- O. Thomas
- et al.
- 1989
- Applied Surface Science
Some properties of CrxV1-xSi2 and CrxMo1-xSi2 thin films
- O. Thomas
- Steve Molis
- et al.
- 1989
- Applied Surface Science
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
- P. Gas
- G. Scilla
- et al.
- 1988
- Journal of Applied Physics
Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Some properties of ReSi2
- C. Krontiras
- L. Grönberg
- et al.
- 1988
- Thin Solid Films
The diffusion of elements implanted in films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Applied Physics
Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon
- M.O. Aboelfotoh
- H.M. Tawancy
- et al.
- 1987
- Applied Physics Letters