Oxidation of silicon-germanium alloys. I. An experimental study
- P.-E. Hellberg
- S.-L. Zhang
- et al.
- 1997
- Journal of Applied Physics
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159 results for F.M. D'Heurle
Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Journal of Materials Research
Stability of interfaces in gold-silicon system regarding equilibrium segregation
- Andrée Rolland
- Christophe Poisson
- et al.
- 1997
- Microscopy Microanalysis Microstructures
Diffusion-reaction: Growth and nucleation
- F.M. D'Heurle
- P. Gas
- et al.
- 1997
- Defect and Diffusion Forum
Kinetics of suicide formation measured by in situ ramped resistance measurements
- E.G. Colgan
- F.M. D'Heurle
- 1996
- Journal of Applied Physics
Phase formation in Cu(Sn) alloy thin films
- L. Clevenger
- B. Arcot
- et al.
- 1996
- MRS Spring Meeting 1996
Stresses during silicide formation: A review
- F.M. D'Heurle
- O. Thomas
- 1996
- Defect and Diffusion Forum
Precisions on reaction monitoring from in-situ resistance measurements: Relations between such measurements and actual reaction kinetics
- S.-L. Zhang
- F.M. D'Heurle
- 1996
- Thin Solid Films
Interfaces in silicides
- F.M. D'Heurle
- 1996
- J. Phys. IV
On the formation of epitaxial CoSi2 from the reaction of Si with a Co/Ti bilayer
- S.-L. Zhang
- J. Cardenas
- et al.
- 1995
- Applied Physics Letters