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49 results for J. Freeouf

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
- - J. Freeouf
  - Alan C. Warren
  - et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- - Alan C. Warren
  - J. Woodall
  - et al.
- 1990
- Applied Physics Letters
Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- - J. Freeouf
  - J. Woodall
  - et al.
- 1990
- Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- - M.R. Melloch
  - N. Otsuka
  - et al.
- 1990
- Applied Physics Letters
Accumulation capacitance for GaAs-SiO₂ interfaces with Si interlayers
- - J. Freeouf
  - D.A. Buchanan
  - et al.
- 1990
- Applied Physics Letters
The analysis of complex samples by spectroscopic ellipsometry
- - J. Freeouf
- 1990
- Applied Surface Science
The electronic properties and control of semiconductor interfaces
- - J. Woodall
  - P.D. Kirchner
  - et al.
- 1990
- Corrosion Science
Application of spectroscopic ellipsometry to complex samples
- - J. Freeouf
- 1988
- Applied Physics Letters
Defective heterojunction models
- - J. Freeouf
  - J. Woodall
- 1986
- Surface Science
Reactions of Pd on (100) and (110) GaAs surfaces
- - T.S. Kuan
  - J. Freeouf
  - et al.
- 1985
- Journal of Applied Physics