The electronic structure of impurities and other point defects in semiconductors
- Sokrates T. Pantelides
- 1978
- Reviews of Modern Physics
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100 results for Sokrates T. Pantelides
Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs
- J. Bernholc
- Sokrates T. Pantelides
- 1978
- Physical Review B
Theory of binding energies of acceptors in semiconductors
- J. Bernholc
- Sokrates T. Pantelides
- 1977
- Physical Review B
The electronic structure of SiO2, GeO2 and intermediate SixGe1-xO2 compositions: experiment and theory
- Sokrates T. Pantelides
- Bernhard Fischer
- et al.
- 1977
- Solid State Communications
Oscillator strengths in tetrahedral semiconductors
- Walter A. Harrison
- Sokrates T. Pantelides
- 1976
- Physical Review B
Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous SiO2 and GeO2
- Sokrates T. Pantelides
- Walter A. Harrison
- 1976
- Physical Review B
Comment on the valence-band widths of alkali halides
- Sokrates T. Pantelides
- 1976
- Physical Review B
Valence bands and density of states for -cristobalite form of SiO2
- S.T. Pantelides
- 1975
- Physics Letters A
Lattice-relaxation effects at point imperfections in semiconductors
- Sokrates T. Pantelides
- 1975
- Physical Review B
Universal valence bands for rocksalt-type compounds and their connection with those of tetrahedral crystals
- Sokrates T. Pantelides
- 1975
- Physical Review B