The electronic structure of deep SP-bonded acceptor impurities in semiconductors
- J. Bernholc
- S.T. Pantelides
- et al.
- 1981
- Solid State Communications
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100 results for Sokrates T. Pantelides
Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in silicon
- J. Bernholc
- Nunzio O. Lipari
- et al.
- 1980
- Physical Review B
Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfaces
- J. Pollmann
- Sokrates T. Pantelides
- 1980
- Physical Review B
The effective-mass nature of deep-level point-defect states in semiconductors
- S.T. Pantelides
- N.O. Lipari
- et al.
- 1980
- Solid State Communications
Final-state effects in the excitation spectra of deep impurities in semiconductors
- Sokrates T Pantelides
- Hermann G Grimmeiss
- 1980
- Solid State Communications
Localization of electronic states at free semiconductor surfaces
- J. Pollmann
- Sokrates T. Pantelides
- 1979
- Physical Review B
Basis sets for the study of point defects in solids using green's-function methods
- Ulf Lindefelt
- Sokrates T. Pantelides
- 1979
- Solid State Communications
New method for the electronic structure of heterojunctions - Application to the (100) Ge-GaAs interfaces
- J. Pollmann
- S.T. Pantelides
- 1979
- Solid State Communications
Multiband and multivalley effective-mass theory for impurities in semiconductors
- Sokrates T. Pantelides
- 1979
- Solid State Communications
Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and SiO2
- J. Pollmann
- Sokrates T. Pantelides
- 1978
- Physical Review B