Modeling of the diffusion of implanted boron in strained Si/Si1-xGex
- Huilong Zhu
- Kam-Leung Lee
- et al.
- 2002
- SISPAD 2002
Publications
Date
Featured collections
Popular topics
58 results for F. Cardone
DUV stability of carbon films for attenuated phase shift mask applications
- Alessandro Callegari
- Katherina Babich
- et al.
- 1998
- SPIE Advanced Lithography 1998
Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
- S. Guha
- N.A. Bojarczuk
- et al.
- 1997
- Applied Physics Letters
Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature
- P.M. Mooney
- L. Tilly
- et al.
- 1997
- Journal of Applied Physics
Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations
- J.S. Reid
- E. Kolawa
- et al.
- 1996
- Journal of Applied Physics
Thermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors
- E.S. Harmon
- M.R. Melloch
- et al.
- 1994
- Applied Physics Letters
Film stress of sputtered W/C multilayers and strain relaxation upon annealing
- J.F. Geisz
- T.F. Kuech
- et al.
- 1994
- Journal of Applied Physics
Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth
- J.W. Huang
- D.F. Gaines
- et al.
- 1994
- Journal of Electronic Materials
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
- L. Clevenger
- N.A. Bojarczuk
- et al.
- 1993
- Journal of Applied Physics