Modeling of the diffusion of implanted boron in strained Si/Si_1-xGe_x

Abstract

The diffusion of implanted boron in strained Si/Si1-xGex is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amorphization and a modified pre-amorphization model is used in TSUPREM4 in order to accurately model our measurement data. Our simulations of boron diffusion are in reasonable agreement with our SIMS data. Comparison of the CSM with the model of immobile boron-germanium clusters is also discussed.