Synthesis of Si1-yCy alloys by molecular beam epitaxy
- Subramanian S. Iyer
- K. Eberl
- et al.
- 1992
- Applied Physics Letters
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58 results for F. Cardone
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- M.A. Tischler
- P.M. Mooney
- et al.
- 1992
- Journal of Applied Physics
Oxidation induced AlAs/GaAs superlattice disordering
- J.C.P. Chang
- K.L. Kavanagh
- et al.
- 1992
- Applied Physics Letters
Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Crystal Growth
Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Electronic Materials
Boron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistors
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters