Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Electronic Materials
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58 results for F. Cardone
Boron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistors
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- Applied Physics Letters
Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- Richard A. Kiehl
- P.E. Hallali
- et al.
- 1991
- IEEE Electron Device Letters