S.W. Bedell, H.J. Hovel, et al.
ECS Meeting 2005
Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.
S.W. Bedell, H.J. Hovel, et al.
ECS Meeting 2005
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993
K.L. Saenger, J.P. De Souza, et al.
MRS Spring Meeting 2006
K.L. Saenger, K.E. Fogel, et al.
Journal of Applied Physics