Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
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58 results for F. Cardone
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Annealing behavior of GaAs implanted with Si+ and SiF + and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- J.P. De Souza
- D.K. Sadana
- et al.
- 1990
- Applied Physics Letters
N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- D.K. Sadana
- J.P. De Souza
- et al.
- 1990
- Applied Physics Letters
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials