Point defects and deep traps in III-V compounds
- J.A. Van Vechten
- 1980
- Czechoslovak Journal of Physics
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44 results for J.A. Van Vechten
Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting
- J.A. Van Vechten
- R. Tsu
- et al.
- 1979
- Physics Letters A
Nonthermal pulsed laser annealing of Si; plasma annealing
- J.A. Van Vechten
- R. Tsu
- et al.
- 1979
- Physics Letters A
TA-A1 Theory of Nonthermal Pulsed Laser Annealing
- J.A. Van Vechten
- Ellen J. Yoffa
- et al.
- 1979
- IEEE T-ED
Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?
- B. Monemar
- R.M. Potemski
- et al.
- 1978
- Physical Review Letters
Formation of interstitial-type dislocation loops in tetrahedral semiconductors by precipitation of vacancies
- J.A. Van Vechten
- 1978
- Physical Review B
Surface reconstruction as a source of growth steps
- J.A. Van Vechten
- 1977
- Journal of Crystal Growth
Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and Ge
- J.A. Van Vechten
- C.D. Thurmond
- 1976
- Physical Review B
Entropy of ionization and temperature variation of ionization levels of defects in semiconductors
- J.A. Van Vechten
- C.D. Thurmond
- 1976
- Physical Review B
Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps
- V. Heine
- J.A. Van Vechten
- 1976
- Physical Review B