Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

Date

Start

End

Featured collections

Popular topics

119 results for D.J. DiMaria

Hole injection into silicon nitride: Interface barrier energies by internal photoemission
- - D.J. Dimaria
  - P.C. Arnett
- 2008
- Applied Physics Letters
Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structures
- - D.J. DiMaria
- 2008
- Journal of Applied Physics
Capture of electrons into Na⁺-related trapping sites in the SiO₂ layer of MOS structures at 77 °K
- - D.J. DiMaria
  - J.M. Aitken
  - et al.
- 2008
- Journal of Applied Physics
Contact currents in silicon nitride
- - P.C. Arnett
  - D.J. Dimaria
- 2008
- Journal of Applied Physics
Effects of electron-beam irradiation on the properties of CVD Si ₃N₄ films in MNOS structures
- - T.P. Ma
  - B.H. Yun
  - et al.
- 2008
- Journal of Applied Physics
Room-temperature conductivity and location of mobile sodium ions in the thermal silicon dioxide layer of a metal-silicon dioxide-silicon structure
- - D.J. DiMaria
- 2008
- Journal of Applied Physics
Electron-trapping characteristics of W in SiO₂
- - D.R. Young
  - D.J. Dimaria
  - et al.
- 2008
- Journal of Applied Physics
Location of positive charges in SiO₂ films on Si generated by vuv photons, x rays, and high-field stressing
- - D.J. DiMaria
  - Z.A. Weinberg
  - et al.
- 2008
- Journal of Applied Physics
Use of electron-trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures
- - D.J. Dimaria
  - D.R. Young
  - et al.
- 2008
- Applied Physics Letters
Centroid location of implanted ions in the SiO₂ layer of MOS structures using the photo I-V technique)
- - D.J. DiMaria
  - D.R. Young
  - et al.
- 2008
- Journal of Applied Physics