Doping effects in reactive plasma etching of heavily doped silicon
- Young H. Lee
- Mao-Min Chen
- et al.
- 1985
- Applied Physics Letters
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38 results for Y.H. Lee
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Study of silicon contamination and near-surface damage caused by CF 4/H2 reactive ion etching
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1984
- Applied Physics Letters
Reactive etching mechanism of tungsten silicide in CF4-O2 plasma
- Young H. Lee
- Mao-Min Chen
- et al.
- 1984
- Thin Solid Films
Silicon etching mechanism and anisotropy in CF4+O2 plasma
- Young H. Lee
- Mao-Min Chen
- 1983
- Journal of Applied Physics
A transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
- Y.H. Lee
- K.L. Wang
- et al.
- 1980
- physica status solidi (a)
High‐temperature ion implantation in diamond
- Y.H. Lee
- P.R. Brosious
- et al.
- 1978
- physica status solidi (a)
Electron paramagnetic resonance in diamond implanted at various energies and temperatures
- P.R. Brosious
- Y.H. Lee
- et al.
- 1974
- physica status solidi (a)