Highly selective KOH-based etchant for boron-doped silicon structuresE. BassousA.C. Lamberti1989Microelectronic Engineering
Deep trench structures in silicon for sensitivity enhancement of Si/SiO2 interface studiesJ.H. StathisE. Bassouset al.1988Applied Physics Letters
Transmission, photoconductivity, and the experimental band gap of thermally grown SiO2 filmsZ.A. WeinbergG.W. Rubloffet al.1979Physical Review B
Fabrication of novel three-dimensional microstructures by the anisotropic etching of (100) and (110) siliconErnest Bassous1978IEEE T-ED