Electron trapping in SiO2 at 295 and 77 °K
- D.R. Young
- E.A. Irene
- et al.
- 2008
- Journal of Applied Physics
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31 results for D.R. Young
Exciton or hydrogen diffusion in SiO2?
- Z.A. Weinberg
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
Radiation damage in silicon dioxide films exposed to reactive ion etching
- D.J. DiMaria
- L.M. Ephrath
- et al.
- 2008
- Journal of Applied Physics
Measurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling
- A.D. Marwick
- D.R. Young
- 1988
- Journal of Applied Physics
Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Journal of Applied Physics
Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere
- K. Hofmann
- D.R. Young
- et al.
- 1987
- Journal of Applied Physics
High temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors
- F.J. Feigl
- R. Gale
- et al.
- 1984
- Nuclear Inst. and Methods in Physics Research, B
Charge transport and trapping phenomena in off-stoichiometric silicon dioxide films
- D.J. DiMaria
- D.W. Dong
- et al.
- 1983
- Journal of Applied Physics