Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
- H. Kawasaki
- V.S. Basker
- et al.
- 2009
- IEDM 2009
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123 results for Yu Zhu
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
On the dynamic resistance and reliability of phase change memory
- B. Rajendran
- M.H. Lee
- et al.
- 2008
- VLSI Technology 2008
Patterning of N:Ge2Sb2Te5 films and the characterization of etch induced modification for non-volatile phase change memory applications
- E. Joseph
- T.D. Happ
- et al.
- 2008
- VLSI-TSA 2008