Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
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123 results for Yu Zhu
Transmission electron microscopy characterization of FinFET - Understanding the 3D structure by 2D imaging technique
- Yu Zhu
- Jemima Gonsalves
- 2011
- ISTFA 2011
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber
- Byungha Shin
- Oki Gunawan
- et al.
- 2011
- Progress in Photovoltaics
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs
- Hiroshi Miki
- M. Yamaoka
- et al.
- 2011
- VLSI Technology 2011
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
- H.L. Lung
- Matthew Breitwisch
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface
- Sufi Zafar
- Christopher D'Emic
- et al.
- 2011
- Nanotechnology