ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
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99 results for Chung Lam
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- ISSCC 2016
Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization
- Jesse H. Engel
- Sukru Burc Eryilmaz
- et al.
- 2014
- IEDM 2014
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
Phase Change Memory and its intended applications
- Chung Lam
- 2014
- IEDM 2014
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- Matthew Bright Sky
- Norma Sosa
- et al.
- 2015
- IEDM 2015
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
- Sangbum Kim
- N. Sosa
- et al.
- 2013
- IEDM 2013