Estimation of amorphous fraction in multilevel phase change memory cells
- 2009
- ESSDERC 2009
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99 results for Chung Lam
Characterization of poly-silicon emitter BJTs as access devices for phase change memory
- B. Rajendran
- M. Breitwisch
- et al.
- 2009
- VLSI-TSA 2009
Endurance improvement of Ge2Sb2Te5-based phase change memory
- Chieh-Fang Chen
- A.G. Schrott
- et al.
- 2009
- IMW 2009
Characteristics of a highly scalable bridge phase change memory
- Yi-Chou Chen
- Yuyu Lin
- et al.
- 2008
- ICSICT 2008
On the dynamic resistance and reliability of phase change memory
- B. Rajendran
- M.H. Lee
- et al.
- 2008
- VLSI Technology 2008
Patterning of N:Ge2Sb2Te5 films and the characterization of etch induced modification for non-volatile phase change memory applications
- E. Joseph
- T.D. Happ
- et al.
- 2008
- VLSI-TSA 2008
Cell design considerations for phase change memory as a universal memory
- Chung Lam
- 2008
- VLSI-TSA 2008
Optimized scaling of diode array design for 32NM node phase change memory
- Kailiang Lu
- Bipin Rajendran
- et al.
- 2008
- VLSI-TSA 2008
Phase change memory - Opportunities and challenges
- Bipin Rajendran
- Hsiang-Lan Lung
- et al.
- 2007
- IWPSD 2007
Novel lithography-independent pore phase change memory
- M. Breitwisch
- T. Nirschl
- et al.
- 2007
- VLSI Technology 2007