Evaluation of channel hot carrier effects in n-MOS transistors at 77 K with the charge pumping technique
- P. Heremans
- Y.-C. Sun
- et al.
- 1987
- Applied Surface Science
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High temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
Charge trapping in n-AlxGa1-xAs "insulators" and related device instabilities
- T.N. Theis
- B.D. Parker
- 1987
- Applied Surface Science