Hot electrons in silicon dioxide: Ballistic to steady-state transportD.J. DiMariaM.V. Fischetti1987Applied Surface Science
Charge trapping in n-AlxGa1-xAs "insulators" and related device instabilitiesT.N. TheisB.D. Parker1987Applied Surface Science
Evaluation of channel hot carrier effects in n-MOS transistors at 77 K with the charge pumping techniqueP. HeremansY.-C. Sunet al.1987Applied Surface Science